Single antiferromagnetic MnTe (sub)monolayers in CdTe/CdMgTe quantum wells

Citation
G. Prechtl et al., Single antiferromagnetic MnTe (sub)monolayers in CdTe/CdMgTe quantum wells, SEMIC SCI T, 15(6), 2000, pp. 506-510
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
6
Year of publication
2000
Pages
506 - 510
Database
ISI
SICI code
0268-1242(200006)15:6<506:SAM(IC>2.0.ZU;2-J
Abstract
Antiferromagnetic MnTe (sub)monolayers inserted into nonmagnetic CdTe/CdMgT e quantum wells are investigated by magneto-optical spectroscopy. In partic ular, the Zeeman splitting is determined from polarization dependent photol uminescence excitation experiments. Rapid thermal annealing (RTA) is applie d to diffuse Mn out of the (sub)monolayer barriers into the quantum well. T he resulting Mn diffusion leads to a substantial increase of the Zeeman spl itting. Furthermore, the annealing induced broadening of the MnTe (sub)mono layer barrier in the well is accompanied by a decrease of the barrier heigh t, leading to a blue shift or a red shift of the e(1)-hh(1) transition, dep ending on the detailed sample structure. A comparison of the observed energ y shifts with model calculations allows us to estimate the thickness of the MnTe barriers. These are found to be very close to their nominal values be fore annealing, regardless of the chosen MnTe band offset and effective mas ses.