The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples

Citation
S. Agan et al., The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples, SEMIC SCI T, 15(6), 2000, pp. 551-556
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
6
Year of publication
2000
Pages
551 - 556
Database
ISI
SICI code
0268-1242(200006)15:6<551:TPTIS:>2.0.ZU;2-2
Abstract
The thermal conductivity and the thermoelectric power of two dimensional ho le and electron gases in B and Sb delta-doped Si structures have been measu red for the first time. The temperature range was 1.4 K to 30 K, and carrie r sheet densities were in the range 0.3 to 1.0 x 10(14) cm(-2). Kohn anomal ies have been observed in all samples. The thermopower is dominated by the phonon drag contribution in each case. Calculations of the temperature depe ndence of the thermopower agree with experimental data when unscreened phon on scattering potentials are used for Si:B and Si:Sb.