Induced photopleochroism of CuInSe2 structures prepared by heat treatment and deposition of CdS and In2O3 thin films

Citation
Vy. Rud et al., Induced photopleochroism of CuInSe2 structures prepared by heat treatment and deposition of CdS and In2O3 thin films, SEMIC SCI T, 15(6), 2000, pp. 625-629
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
6
Year of publication
2000
Pages
625 - 629
Database
ISI
SICI code
0268-1242(200006)15:6<625:IPOCSP>2.0.ZU;2-#
Abstract
Photosensitive structures have been prepared by heat treatment of p- and n- CuInSe2 polycrystalline substrates at 500 degrees C in vacuum or air and su bsequent deposition of CdS and In2O3 thin films on the CuInSe2 surface. The photosensitivity spectra of the structures have been measured in natural a nd linearly polarized radiation. The photosensitivity is analysed in relati on to the structure preparation conditions. Induced polarization photosensi tivity was observed, and peculiarities of this phenomenon caused by the ant ireflection effect in thin films of the prepared structures are discussed. A conclusion is made that the polarization photoelectric spectroscopy can b e used for diagnostics of photovoltaic solar cells.