Special features of generation-recombination processes in the p-n junctions based on HgMnTe

Authors
Kosyachenko, LA Ostapov, SE Weiguo, S
Citation
La. Kosyachenko et al., Special features of generation-recombination processes in the p-n junctions based on HgMnTe, SEMICONDUCT, 34(6), 2000, pp. 668-670
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
6
Year of publication
2000
Pages
668 - 670
Database
ISI
SICI code
1063-7826(2000)34:6<668:SFOGPI>2.0.ZU;2-R
Abstract
New experimental data on the charge transport in p-n junctions based on Hg1 - xMnxTe (x approximate to 0.11) are reported. The experimental I-V charac teristics are interpreted in terms of the Sah-Noyce-Shockley theory with al lowance made for special features of recombination of the charge carriers i n a narrow-gap semiconductor. (C) 2000 MAIK "Nauka/Interperiodica".