Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells

Authors
Evstigneev, SV Imamov, RM Lomov, AA Sadof'ev, YG Khabarov, YV Chuev, MA Shipitsin, DS
Citation
Sv. Evstigneev et al., Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells, SEMICONDUCT, 34(6), 2000, pp. 693-699
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
6
Year of publication
2000
Pages
693 - 699
Database
ISI
SICI code
1063-7826(2000)34:6<693:LPAXDS>2.0.ZU;2-J
Abstract
The structures grown by molecular-beam epitaxy with InxGa1 - xAs quantum we lls (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton reco mbination lines in the QWs with step-graded In distribution were calculated , and good agreement with the experimental data was obtained. (C) 2000 MAIK "Nauka/Interperiodica".