Sv. Evstigneev et al., Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells, SEMICONDUCT, 34(6), 2000, pp. 693-699
The structures grown by molecular-beam epitaxy with InxGa1 - xAs quantum we
lls (QWs) in GaAs were studied by X-ray diffractometry and low-temperature
photoluminescence techniques. The inhomogeneity of the QW composition along
the growth direction was established. Energy positions of the exciton reco
mbination lines in the QWs with step-graded In distribution were calculated
, and good agreement with the experimental data was obtained. (C) 2000 MAIK
"Nauka/Interperiodica".