The Staebler-Wronski effect and temperature dependences of photoconductivity in p-type a-Si : H

Temperature dependences of the photoconductivity of boron doped a-Si:H film s both prior to and after prolonged illumination were studied. It was found that the photoconductivity of films under study in the temperature range 2 00-300 K (intermediate temperatures) is independent of the doping level and the concentration of deep recombination centers (dangling bonds). A model of recombination is used to explain the experimental results; according to this model, the occupancy function of neutral dangling bonds in p-type a-Si :H (and, consequently, also the photoconductivity) is determined by the par ameters of the states of the valence band tail and is independent of the do ping level and of the total concentration of dangling bonds. (C) 2000 MAIK "Nauka/Interperiodica".