Modification of optoelectronic properties of porous silicon produced in anelectrolyte based on heavy water

The methods of infrared spectroscopy, electron spin resonance, and photolum inescence were used to study the porous-silicon layers formed by electroche mical treatment of Si in an HF : D2O solution. In contrast with the samples prepared in a conventional electrolyte (HF : H2O), a steady increase in th e photoluminescence intensity in the course of routine oxidation of the sam ple was observed, with the hydrogen coverage of the silicon-skeleton surfac e retained. A mechanism for anomalous oxidation of the layers of porous sil icon obtained in a mixture of HF and heavy water is suggested. (C) 2000 MAI K "Nauka/Interperiodica".