Photoelectrical behaviour of Schottky junctions between poly(4H-cyclopenta[2,1-b : 3,4-b ']dithiophene) and aluminium: influence of the temperature of electrosynthesis

Authors
Camaioni, N Casalbore-Miceli, G Geri, A Berlin, A
Citation
N. Camaioni et al., Photoelectrical behaviour of Schottky junctions between poly(4H-cyclopenta[2,1-b : 3,4-b ']dithiophene) and aluminium: influence of the temperature of electrosynthesis, SYNTH METAL, 113(1-2), 2000, pp. 99-101
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
113
Issue
1-2
Year of publication
2000
Pages
99 - 101
Database
ISI
SICI code
0379-6779(20000615)113:1-2<99:PBOSJB>2.0.ZU;2-M
Abstract
The photoelectrical behaviour of Schottky junctions between poly(4H-cyclope nta[2,1-b:3,4-b']dithiophene) (poly(CPDT)) and aluminium, with the polymer electrosynthesised both at ambient and low (-24 degrees C) temperature, was compared. Higher photocurrent and photosensitivity values were obtained fo r the system based on the polymer prepared at low temperature. An improveme nt of the structural order and of carrier mobility for the polymer synthesi sed at -24 degrees C was hypothesised. (C) 2000 Elsevier Science S.A. All r ights reserved.