A numerical simulation model for the growth of GaxIn1-xSb by the travelling heater method

A numerical simulation model for the growth of Gn(x)In(1-x)Sb by the travel ing heater method (THM) is presented. The cell configuration and the furnac e thermal profile are adopted from the experimental setup of Amistar Resear ch Inc. The field equations are solved numerically by an adaptive finite el ement procedure as the interfaces between the solid and liquid phases chang e in time. Numerical results show that the furnace thermal profile, the the rmal as well as solutal convection in the liquid solution have significant effects on the growth process. Results are only presented for small growth times. However, it is asserted that the present simulation model could be u sed to simulate the entire THM growth process of ternary alloys if the requ ired computational power is available.