Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates

In this paper we show that simple pre-epitaxial wet chemical treatment of G aAs substrates in Na,S-water solutions allows one to grow reproducibly by m olecular beam epitaxy (MBE) ZnSe-based structures with significantly lowere d stacking fault (SF) density down to similar to 3 x 10(5) cm(-2). This def ect density is comparable with that obtained on the (2 x 4)As-stabilized su rfaces of GaAs MBE grown buffer layer at the same ZnSe growth initiation pr ocedure. This effect is shown to be achieved by development of optimized pa ssivating and annealing procedures, which produce oxygen and gallium-free G aAs surface terminated with As or S dimmers. (C) 2000 Elsevier Science Ltd. All rights reserved.