Structural and electrical properties of HgTe thin films

Authors
Seyam, MAM Elfalaky, A
Citation
Mam. Seyam et A. Elfalaky, Structural and electrical properties of HgTe thin films, VACUUM, 57(1), 2000, pp. 31-41
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
57
Issue
1
Year of publication
2000
Pages
31 - 41
Database
ISI
SICI code
0042-207X(200004)57:1<31:SAEPOH>2.0.ZU;2-3
Abstract
Thin films of HgTe were thermally, flash, evaporated onto glass substrates at room temperature. The structural investigations showed that stoichiometr ic and amorphous films were produced. The electrical resistivity, thermoele ctric power and space charge characteristics were also studied at room and elevated temperatures. The measurements indicated that HgTe thin films beha ve as a p-type semiconductor with current carrier concentration between 10( 21) and 10(25) m(-3). Two conduction mechanisms were applied to interpret t he obtained results. (C) 2000 Elsevier Science Ltd. All rights reserved.