PARAMAGNETISM AND ELECTRICAL-CONDUCTIVITY CENTER RELATION IN SEMICONDUCTOR OLIGORESORCINOL

The electrical properties of oligoresorcinols with various concentrati ons of paramagnetic centres (N-s) in constant and variable electric fi elds have been investigated. It has been established that the electric al conductivity and the tangent of the dielectric loss angle are incre ased with the growth of N-s in the composition of the oligoresorcinol. With increase of frequency the electrical conductivity of oligoresorc inol increases according to the usual law. It has been shown that the electrical conductivity and concentration of paramagnetic centres of o ligoresorcinol are interrelated and charge transfer in a variable fiel d predominates at the expense of jumps of charge bearers between local ized states with energy near the Fermi level. The densities of the sta tes near the Fermi level for resorcinol examples have been calculated. The results show that, in this case, paramagnetic centres of the arox yl type determine the density of the localized states near the Fermi l evel.