Tunable extended-cavity diode laser stabilized on iodine at lambda=633 nm

Citation
J. Lazar et al., Tunable extended-cavity diode laser stabilized on iodine at lambda=633 nm, APPL OPTICS, 39(18), 2000, pp. 3085-3088
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
39
Issue
18
Year of publication
2000
Pages
3085 - 3088
Database
ISI
SICI code
0003-6935(20000620)39:18<3085:TEDLSO>2.0.ZU;2-X
Abstract
We present a tunable extended-cavity semiconductor laser, based on the Litt man configuration, which has been frequency-stabilized to Doppler-free hype rfine transitions in I-2. The stability was measured compared with the refe rence He-Ne-I-2 laser system, whereas the semiconductor laser was locked on components of the P(33)6-3 transition close enough to the reference R(127) 11-5 line to allow beat frequency counting. A relative stability of 4 x 10 (-12) over a 100-s integration time was achieved. The laser configuration a llowed mode-hop-free tuning over a range including the P(33) 6-3 transition and the group of strong overlapping transitions R(60) 8-4, R(125) 9-4, and P(54) 8-4 with higher signal-to-noise ratio than the P(33) 6-3 located app roximately 13 GHz toward lower optical frequencies. (C) 2000 Optical Societ y of America. OCIS codes: 140.2020, 140.3600, 120.3940, 120.4800, 300.6260, 300.1030.