Displacement measurement that uses transient photoelectromotive force effects in CdTe : V with frequency-modulated lasers

Authors
Jin, F Khurgin, JB Wang, CC Trivedi, S Gabay, Y Gad, E Temple, DA Hommerich, UH
Citation
F. Jin et al., Displacement measurement that uses transient photoelectromotive force effects in CdTe : V with frequency-modulated lasers, APPL OPTICS, 39(18), 2000, pp. 3138-3142
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
39
Issue
18
Year of publication
2000
Pages
3138 - 3142
Database
ISI
SICI code
0003-6935(20000620)39:18<3138:DMTUTP>2.0.ZU;2-Q
Abstract
A new method of displacement measurement that uses the transient photoelect romotive force effects that arise in semiconductors illuminated by two freq uency-modulated lasers is proposed and demonstrated experimentally. A heigh t resolution of 0.85 mu m was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution. (C) 2000 O ptical Society of America. OCIS codes: 120.3180, 120.0280, 280.3400, 160.53 20, 040.5350.