70+mu m deep domain inversion in X-cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator

Citation
T. Kishino et al., 70+mu m deep domain inversion in X-cut LiNbO3 and its use in a high-speed bandpass integrated-optic modulator, APPL PHYS L, 76(26), 2000, pp. 3852-3854
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
26
Year of publication
2000
Pages
3852 - 3854
Database
ISI
SICI code
0003-6951(20000626)76:26<3852:7MDDII>2.0.ZU;2-Q
Abstract
A deep domain inversion (DI) technique for X-cut LiNbO3 is reported. DI reg ions as deep as 70 mu m, i.e., deep enough for virtually any guided-wave ap plication, were obtained by electric-field poling, with even deeper DI regi ons possible. As an application of the DI technique, a bandpass traveling-w ave Mach-Zehnder modulator is demonstrated with a 15 GHz bandwidth centered at 21 GHz. (C) 2000 American Institute of Physics. [S0003-6951(00)03726-8] .