Suppression of implantation-induced damage in 6H-SiC by simultaneous excimer laser irradiation during ion implantation

The implantation-induced damage suppression effect on 6H-SiC by simultaneou s excimer laser irradiation during ion implantation (SLII) was demonstrated . A 308-nm XeCl excimer laser was used as the light source. Secondary ion m ass spectroscopy indicated that SLII causes N atom diffusion in SiC. The da mage suppression effect was evaluated by Rutherford backscattering channeli ng measurement. SLII proved to be effective for the suppression of implanta tion-induced damage in SiC. In the vicinity of the surface, SiC with almost no implantation-induced damage was obtained without postimplantation annea ling. (C) 2000 American Institute of Physics. [S0003-6951(00)00626-4].