Vapor-phase epitaxial growth on porous 6H-SiC analyzed by Raman scattering

SiC vapor-phase epitaxy on porous silicon carbide (PSC) substrates formed b y electrochemical anodization is reported. Raman scattering indicates that the polytype of the optically smooth SiC grown on PSC formed in both p-type and n-type 6H substrates is 6H. The Raman scattering selection rules in th ese films are the same as those observed in the bulk substrate and epilayer s grown on bulk, indicating high crystalline quality. The formation of epit axial 6H-SiC on porous 6H-SiC may open up new possibilities for dielectric device isolation, fabrication, and epitaxial lift-off. (C) 2000 American In stitute of Physics. [S0003-6951(00)01026-3].