Citation
Y. Oishi et al., Structural characterization of AlAs/AIP superlattices, APPL PHYS L, 76(26), 2000, pp. 3885-3886
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
26
Year of publication
2000
Pages
3885 - 3886
Database
ISI
SICI code
0003-6951(20000626)76:26<3885:SCOAS>2.0.ZU;2-G
Abstract
(AlAs)(n)/(AlP)(n) (n=1-3) short-period superlattices were grown by gas-sou
rce migration-enhanced epitaxy at a low growth temperature. Dynamical-theor
y simulations of x-ray diffraction patterns were conducted and showed good
agreement with experimentally obtained patterns. In addition, cross-section
al transmission electron microscopy analysis was performed, which confirmed
that high-quality short-period superlattices of AlAs/AlP were grown. (C) 2
000 American Institute of Physics. [S0003-6951(00)02326-3].