Strong surface disorder and loss of N produced by ion bombardment of GaN

The damage buildup in wurtzite GaN films under light (C-12) and heavy (Au-1 97) ion bombardment at temperatures from -196 to 550 degrees C is studied b y Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the expected damage peak in the region o f the maximum of nuclear energy loss has been observed for all implant cond itions of this study. Capping of GaN with SiOx and SixNy layers prior to im plantation somewhat reduces but does not eliminate surface disordering. Thi s suggests that nitrogen loss is not the main reason for the observed enhan ced surface disorder, but, rather, the GaN surface acts as a strong sink fo r migrating point defects. However, pronounced loss of N during ion bombard ment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400 degrees C leads to complete decomposition of the near-surface la yer. (C) 2000 American Institute of Physics. [S0003-6951(00)02626-7].