Avalanche noise measurement in thin Si p(+)-i-n(+) diodes

The avalanche multiplication and excess noise properties of a range of subm icron Si diodes have been investigated. In these thin diodes the excess noi se is found to fall below that predicted by conventional local noise theory . Modeling of the multiplication and excess noise using a recurrence method , which includes the dead space for carrier ionization, gives good agreemen t with experiment. This suggests that the dead space can reduce the excess noise in submicron Si diodes. (C) 2000 American Institute of Physics. [S000 3-6951(00)02026-X].