Ultraviolet photon counting with GaN avalanche photodiodes

Citation
Ka. Mcintosh et al., Ultraviolet photon counting with GaN avalanche photodiodes, APPL PHYS L, 76(26), 2000, pp. 3938-3940
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
26
Year of publication
2000
Pages
3938 - 3940
Database
ISI
SICI code
0003-6951(20000626)76:26<3938:UPCWGA>2.0.ZU;2-0
Abstract
Photon counting, utilizing Geiger-mode avalanche response, has been demonst rated at 300 K in avalanche photodiodes fabricated in GaN grown by hydride vapor-phase epitaxy. Measurements have been made using both passive-quench and time-gated modes of operation. The two important figures of merit for p hoton-counting applications, photon detection efficiency (PDE) and dark cou nt rate, were measured. A maximum PDE of 13% was measured at 325 nm with a dark count rate of 400 kHz. Typical mesa-etched devices exhibit a parasitic shunt leakage current of less than 20 nA at 90% of breakdown voltage. (C) 2000 American Institute of Physics. [S0003-6951(00)03126-0].