Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy

Position- and number-controlled InAs self-organized quantum dots (SOQDs) we re formed by selective-area-metal-organic chemical vapor phase epitaxy on t he partially SiNx patterned GaAs (001) substrate. The mask layer was patter ned along the [110] direction, and somewhat wider rectangular openings were also attached to the line. As a result of GaAs SA growth, a pyramidal shap ed structure was formed on the rectangular region of the pattern. The top a rea of the pyramidal structure is a very narrow hexagonal-shaped (001) face t which is surrounded by two-{111}B and four-{124} facets. The SOQD was pre ferentially formed on the top (001) facet because the growth rate on the (0 01) facet is far much higher than on the surrounding sidewalls. It is found that the number of SOQDs formed is strongly dependent on the width of the top (001)-facet so that control of single, double, and multiple SOQD(s) is possible. (C) 2000 American Institute of Physics. [S0003-6951(00)05526-1].