Atomic-level simulation of ferroelectricity in perovskite solid solutions

Citation
M. Sepliarsky et al., Atomic-level simulation of ferroelectricity in perovskite solid solutions, APPL PHYS L, 76(26), 2000, pp. 3986-3988
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
26
Year of publication
2000
Pages
3986 - 3988
Database
ISI
SICI code
0003-6951(20000626)76:26<3986:ASOFIP>2.0.ZU;2-R
Abstract
Building on the insights gained from electronic-structure calculations and from experience obtained with an earlier atomic-level method, we developed an atomic-level simulation approach based on the traditional Buckingham pot ential with shell model which correctly reproduces the ferroelectric phase behavior and dielectric and piezoelectric properties of KNbO3. This approac h now enables the simulation of solid solutions and defected systems; we il lustrate this capability by elucidating the ferroelectric properties of a K Ta0.5Nb0.5O3 random solid solution. (C) 2000 American Institute of Physics. [S0003-6951(00)04526-5].