Citation
Y. Chen et al., Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001), APPL PHYS L, 76(26), 2000, pp. 4004-4006
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
76
Issue
26
Year of publication
2000
Pages
4004 - 4006
Database
ISI
SICI code
0003-6951(20000626)76:26<4004:SGOEED>2.0.ZU;2-9
Abstract
By choosing a material that has an appropriate asymmetric lattice mismatch
to the host substrate, in this case ErSi2 on Si(001), it is possible to gro
w one-dimensional epitaxial crystals. ErSi2 nanowires are less than one nan
ometer high, a few nanometers wide, close to a micron long, crystallographi
cally aligned to [110](Si) directions, straight, and atomically regular. (C
) 2000 American Institute of Physics. [S0003-6951(00)04426-0].