New thin-film spin-tunneling magnetoresistance memory elements

Authors
Vasil'eva, NP Kasatkin, SI
Citation
Np. Vasil'Eva et Si. Kasatkin, New thin-film spin-tunneling magnetoresistance memory elements, AUT REMOT R, 61(1), 2000, pp. 157-167
Citations number
11
Categorie Soggetti
AI Robotics and Automatic Control
Journal title
AUTOMATION AND REMOTE CONTROL
ISSN journal
00051179 → ACNP
Volume
61
Issue
1
Year of publication
2000
Part
2
Pages
157 - 167
Database
ISI
SICI code
0005-1179(200001)61:1<157:NTSMME>2.0.ZU;2-X
Abstract
The state of the art in spin-tunneling magnetoresistance memory elements is outlined. Control methods are investigated within the framework of microma gnetism theory, and the static and dynamic characteristics of micron-sized elements are derived.