Disorder-order transition in mesoscopic silica thin films

Citation
N. Yao et al., Disorder-order transition in mesoscopic silica thin films, CHEM MATER, 12(6), 2000, pp. 1536-1548
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
12
Issue
6
Year of publication
2000
Pages
1536 - 1548
Database
ISI
SICI code
0897-4756(200006)12:6<1536:DTIMST>2.0.ZU;2-L
Abstract
Electron microscopy has been used to study the mesoscopic (nanometer-level) and microscopic (micrometer-level) structural evolution of mesoscopic sili ca thin films grown at the air-water interface under dilute, acidic (pH < 2 ) conditions. Transmission electron microscope observations reveal that the film begins with a disordered (amorphous) structure. Over time, mesoscopic ally ordered regions (hexagonally packed cylindrical channels) nucleate and grow within the film. Scanning electron microscopy reveals microscopic str uctural features such as ribbons, protrusions, domain boundaries, microinde ntations, and pits. Our work shows that mesoscopic order develops within th e film through a "disorder to order transition." Our observations also clar ify the role of the air-water interface in confining film growth to two dim ensions during the initial stages. We note that a two-dimensional (in-plane ) to three-dimensional (unconstrained) growth transition occurs when the fi lm exceeds a critical thickness. We extend the current understanding of the structural evolution of the film by providing a detailed mechanism for the development of mesoscopic order and microscopic features and consider the possibility of a universal growth mechanism for films and particles.