Prediction of semiconductor material properties by the properties of theirconstituent chemical elements

We demonstrate that it is possible to predict the semiconductor material pr operties, like lattice constant and band gap energy, from their chemical st oichiometries and fundamental element properties of the constituents. We us e a correlation technique to show that band gap energy is strongly correlat ed to electronegativity and pseudopotential radii whereas the lattice const ant is strongly correlated to melting temperature and atomic number. Predic tion of band gap energy and lattice constant of some III-V and II-VI semico nductors is made on the basis of the developed correlation model. The techn ique can also be applied to predict bulk properties of ternary or quaternar y semiconductors.