Characteristics of level anticrossing in parallel electric and magnetic fields

Authors
Gu, SH Li, BW
Citation
Sh. Gu et Bw. Li, Characteristics of level anticrossing in parallel electric and magnetic fields, COMM TH PHY, 33(4), 2000, pp. 525-530
Citations number
12
Categorie Soggetti
Physics
Journal title
COMMUNICATIONS IN THEORETICAL PHYSICS
ISSN journal
02536102 → ACNP
Volume
33
Issue
4
Year of publication
2000
Pages
525 - 530
Database
ISI
SICI code
0253-6102(20000615)33:4<525:COLAIP>2.0.ZU;2-O
Abstract
Using the matrix diagonalization method, we have studied two kinds of level anti-crossing of Rydberg cesium atom in parallel electric and magnetic fie lds. Our numerical results reveal that in the vicinity position of level cr ossing between different parity states in a magnetic field, the energy leve ls and other behaviors of the states are quite sensitive to the electric fi eld. We tabulate some features which may be as a guide in experimental veri fication.