Ultrathin gate oxynitrides grown using fast ramp vertical furnace for sub-130 nanometer technology

Ultrathin gate SiOxNy (y similar to 0.3-0.4%) films between 1 and 2 nm were grown in a vertical batch fast thermal processing system. Leakage currents were monitored as a function of film thickness (T), purge gas, oxidation a mbient, and different annealing conditions. Ultrathin oxynitrides down to 1 .2 nm with leakage < 1A/cm(2) have been fabricated. Of the different purge gases studied, O-2 purge gave the highest leakage, while the trend indicate d that NO purge would give the lowest leakage for T-ox < 1.5 nm. Similarly, while oxidation with O-2 yielded the poorest leakage, the trend indicated that NO oxide would give a much lower leakage for T-ox < 1.5 nm. The effect of the process conditions on the metal oxide semiconductor transistor mobi lity was also examined. The high field mobility has a stronger dependence o n the process temperature than on process ambient. (C) 2000 The Electrochem ical Society. S1099-0062(00)03-023-6. All rights reserved.