Low-distortion CMOS complementary class E RF tuned power amplifiers

Authors
Tu, SHL Toumazou, C
Citation
Shl. Tu et C. Toumazou, Low-distortion CMOS complementary class E RF tuned power amplifiers, IEEE CIRC-I, 47(5), 2000, pp. 774-779
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
ISSN journal
10577122 → ACNP
Volume
47
Issue
5
Year of publication
2000
Pages
774 - 779
Database
ISI
SICI code
1057-7122(200005)47:5<774:LCCCER>2.0.ZU;2-V
Abstract
A low-distortion tuned power amplifier which is suitable for integrated cir cuit implementation is proposed. The amplifier is a complementary class-E t uned power amplifier because of both P-type and N-type transistors are empl oyed to achieve a highly symmetrical topology, thereby reducing the signifi cant distortion in the output signal of the conventional single-ended class -E power amplifier. In this paper, a complementary class-E power amplifier is presented together with HSPICE simulation results.