ANOMALOUS HALL-EFFECT IN THIN-FILMS OF PR0.5SR0.5MNO3

We report on the type and density of charge carriers obtained from Hal l-effect measurements in the three different magnetic phases of Pr0.5S r0.5MnO3. The field dependence of the Hall resistivity has two contrib utions of opposite sign: one is related to skew scattering and dominat es in low magnetic fields; the other one is due to the Lorentz-force c ontribution which prevails at higher fields. This second contribution corresponds to a temperature-independent carrier density in the order of 0.8 holes per chemical unit cell. The skew-scattering contribution is related to the susceptibility of the material and is maximum at the transition temperature from the ferro- to the antiferromagnetic state .