Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se

Bi2Te2.85Se0.15 crystals doped with Cu, Cd, In, Ge, S, or Se were grown by the floating-crucible technique. The effective segregation coefficients for the dopants were determined. The thermoelectric power, electrical conducti vity, and thermal conductivity of the samples were measured in the temperat ure range from 77 to 350 K. The effects of the dopants studied on the tempe rature dependences of the electrical properties and thermoelectric figure o f merit were examined. The bending strength of the doped crystals was measu red.