Growth of zinc peroxide (ZnO2) and zinc oxide (ZnO) thin films by the successive ionic layer adsorption and reaction - SILAR - technique

Zinc peroxide, ZnO2, thin films were grown by successive ionic layer adsorp tion and reaction (SILAR) technique at room temperature and normal pressure . The thin films were grown on glass, quartz, silicon, on poly(vinyl chlori de) and polycarbonate substrates. The precursors used for ZnO2 films were d iluted aqueous solutions of ZnCl2 complexed with ethylenediamine for cation and H2O2 for anion constituent of the film. The zinc peroxide film could b e decomposed to zinc oxide by annealing in air or in vacuum. The as-grown f ilms were polycrystalline, or amorphous and the annealed films were amorpho us on all substrate materials. According to scanning electron microscopy im ages the films were uniform and homogeneous. The films were also characteri zed by UV spectroscopy. (C) 2000 Elsevier Science Ltd. All rights reserved.