Molecular beam epitaxial growth and structural properties of HgCdTe layerson CdTe(211)B/Si(211) substrates

Authors
Yang, B Xin, Y Rujirawat, S Browning, ND Sivananthan, S
Citation
B. Yang et al., Molecular beam epitaxial growth and structural properties of HgCdTe layerson CdTe(211)B/Si(211) substrates, J APPL PHYS, 88(1), 2000, pp. 115-119
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
1
Year of publication
2000
Pages
115 - 119
Database
ISI
SICI code
0021-8979(20000701)88:1<115:MBEGAS>2.0.ZU;2-E
Abstract
The nucleation and growth of Hg1-xCdxTe on CdTe(211)B/Si(211) substrates by molecular beam epitaxy are comprehensively studied by in situ reflection h igh energy electron diffraction and transmission electron microscopy. Micro twins are observed to be formed at the interface, but are overgrown later a s the growth proceeds. It is shown that the three-dimensional growth at the nucleation stage of HgCdTe on CdTe(211)B/Si and CdZnTe(211)B is more likel y due to the higher surface energy of Hg1-xCdxTe than that of CdTe(211)B an d CdZnTe(211)B. (C) 2000 American Institute of Physics. [S0021-8979(00)0741 3-2].