An analytic solution of the dissociative and the kickout diffusion mechanisms

An analytic solution of the dissociative and the kickout diffusion mechanis ms has been presented for a one-dimensional region bounded by two parallel surfaces, assuming the rapid recovery of equilibrium conditions of vacancie s and interstitial matrix atoms. This assumption makes the diffusion equati on linear. The calculation results for gold diffusion into a silicon plate with high dislocation density using the literature data are demonstrated. T he assumption of the rapid recovery can be verified using the present solut ion. (C) 2000 American Institute of Physics. [S0021-8979(00)06113-2].