COMPREHENSIVE MODELING OF SILICON MICROSTRIP DETECTORS

In this work, the application of numerical device simulation to the an alysis of high resistivity silicon microstrip detectors is illustrated . The analysis of DC, AC and transient responses of a single-sided, DC -coupled detector has been carried out, providing results in good agre ement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of imp act-generated carriers under the combined action of ohmic and diffusiv e forces is hence accounted for. Application to radiation tolerance st udies is also introduced.