PERFORMANCE OF A DOUBLE-SIDED SILICON MICROSTRIP DETECTOR WITH A WIDE-PITCH N-SIDE READOUT USING A FIELD-PLATE AND A MULTI P-STOP STRUCTURE

Authors
SAITOH Y AKAMINE T INOUE M YAMANAKA J ECHIGO N MIYAHARA S KAMIYA M IKEDA H MATSUDA T BOZEK A HABA J KOIKE S OZAKI H TANAKA M IWASAKI H HIGASHI Y TSUBOYAMA T YAMADA Y BANAS E NATKANIEC Z PALKA H ROZANSKA M RYBICKI K OKUNO S TAJIMA H AIHARA H FUKUNAGA C HIROSE T ASANO Y MORI S TSUJITA Y MIYATA H MIYANO K HAZUMI M HARA T KAWASAKI T NAGASHIMA Y SENYO K
Citation
Y. Saitoh et al., PERFORMANCE OF A DOUBLE-SIDED SILICON MICROSTRIP DETECTOR WITH A WIDE-PITCH N-SIDE READOUT USING A FIELD-PLATE AND A MULTI P-STOP STRUCTURE, IEEE transactions on nuclear science, 44(3), 1997, pp. 622-628
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
3
Year of publication
1997
Part
1
Pages
622 - 628
Database
ISI
SICI code
0018-9499(1997)44:3<622:POADSM>2.0.ZU;2-C
Abstract
The previous double-sided silicon microstrip detector (DSSDs) prototyp e with integrated coupling capacitors formed by oxide-nitride-oxide (O NO) dielectric film showed band-to-band tunneling (BET) current at the field-plate structure for the Nt strip, which represented a limitatio n of the biasing configuration. We report improved characteristics of the modified field-plate structure and the wide-pitch n-side readout u sing a multi p-stop structure combined thereon.