BEAM TEST OF A LARGE-AREA N-ON-N SILICON STRIP DETECTOR WITH FAST BINARY READOUT ELECTRONICS

A large area (60 mm x 60 mm) n-bulk and n-strip readout silicon strip detector prototype was fabricated for the ATLAS SCT detector. Detector modules with a strip length of 12 cm were made by butting two detecto rs. One of the 12 cm modules was irradiated with protons to a fluence of 1.2 x 10(14) p/cm(2), and a beam test was carried out for the non-i rradiated and the irradiated detector modules. Efficiency and noise oc cupancy were analyzed using the beam test data. High efficiency was ob tained for both detectors in the bias voltages down to about half the full depletion voltage. The noise occupancy was <2 x 10(-4) for the 12 cm strips. The measurement of the edge region exhibited a difference in the sensitivity under the bias resistance where no extension of the n(+)-implant was fabricated: the non-irradiated detector showed sensi tivity while the irradiated detector did not. The result was confirmed with a laser.