CORRELATION OF RADIATION-DAMAGE EFFECTS IN HIGH-RESISTIVITY SILICON DETECTORS WITH RESULTS FROM DEEP-LEVEL SPECTROSCOPY

Neutron irradiated high resistivity silicon detectors have been subjec ted to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolutio n of bulk damage induced defect levels was monitored using the TSC met hod. A single TSC peak is found to be correlated with the transient de cay of the depletion voltage which is observed after elevated temperat ure annealing of inverted detectors. In conjunction with deep level pa rameters obtained from an I-DLTS study and changes observed in the eff ective doping concentration and in the leakage current after exposure to high doses of Co-60-gammas, new insight is gained into the radiatio n induced device deterioration and the corresponding annealing behavio r.