V. Shah et al., An atomically detailed description of metal-dielectric interfaces: The crossover from surface to bulk conducting properties of Ag-Xe, J CHEM PHYS, 112(24), 2000, pp. 10998-11004
An atomically detailed simulation method designed to be efficacious for mod
eling conduction properties of closed shell atoms or molecules resident at
interfaces that was developed earlier is applied to a metal-dielectric inte
rface of Ag-Xe. The effective mass of conduction electrons resident at Ag-X
e interfaces as a function of the number of layers of xenon present has bee
n measured experimentally by the Harris group [J. D. McNeill, R. L. Lingle,
Jr., R. E. Jordan, D. F. Padowitz, and C. B. Harris, J. Chem. Phys. 105, 3
883 (1996)]. Here a simple yet effective theoretical model of the interface
is developed and the effective mass that results is in quantitative agreem
ent with the empirical measurements. The effective mass of a conduction ele
ctron is calculated by solving the Schrodinger-Bloch equation using Lanczos
grid methods to obtain the Bloch wave vector (k) dependent energies. The m
etal is treated as a continuum within the effective mass approximation for
the purpose of calculating the eigenenergies. To model the explicit potenti
al energy functions, the electron-atom interaction is taken as a local pseu
dopotential that is fit to simultaneously reproduce the experimentally meas
ured gas phase s-, p-, and d-wave scattering phase shifts. In simulating th
e interfacial environment the potential energy interaction between the elec
tron and xenon atoms is modified to account for many-body polarization effe
cts. This approach shows promise in modeling the conduction properties of m
ore complex interfacial environments, including those of technological inte
rest. (C) 2000 American Institute of Physics. [S0021-9606(00)50624-2].