An atomically detailed description of metal-dielectric interfaces: The crossover from surface to bulk conducting properties of Ag-Xe

Citation
V. Shah et al., An atomically detailed description of metal-dielectric interfaces: The crossover from surface to bulk conducting properties of Ag-Xe, J CHEM PHYS, 112(24), 2000, pp. 10998-11004
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CHEMICAL PHYSICS
ISSN journal
00219606 → ACNP
Volume
112
Issue
24
Year of publication
2000
Pages
10998 - 11004
Database
ISI
SICI code
0021-9606(20000622)112:24<10998:AADDOM>2.0.ZU;2-3
Abstract
An atomically detailed simulation method designed to be efficacious for mod eling conduction properties of closed shell atoms or molecules resident at interfaces that was developed earlier is applied to a metal-dielectric inte rface of Ag-Xe. The effective mass of conduction electrons resident at Ag-X e interfaces as a function of the number of layers of xenon present has bee n measured experimentally by the Harris group [J. D. McNeill, R. L. Lingle, Jr., R. E. Jordan, D. F. Padowitz, and C. B. Harris, J. Chem. Phys. 105, 3 883 (1996)]. Here a simple yet effective theoretical model of the interface is developed and the effective mass that results is in quantitative agreem ent with the empirical measurements. The effective mass of a conduction ele ctron is calculated by solving the Schrodinger-Bloch equation using Lanczos grid methods to obtain the Bloch wave vector (k) dependent energies. The m etal is treated as a continuum within the effective mass approximation for the purpose of calculating the eigenenergies. To model the explicit potenti al energy functions, the electron-atom interaction is taken as a local pseu dopotential that is fit to simultaneously reproduce the experimentally meas ured gas phase s-, p-, and d-wave scattering phase shifts. In simulating th e interfacial environment the potential energy interaction between the elec tron and xenon atoms is modified to account for many-body polarization effe cts. This approach shows promise in modeling the conduction properties of m ore complex interfacial environments, including those of technological inte rest. (C) 2000 American Institute of Physics. [S0021-9606(00)50624-2].