GAS AVALANCHE PIXEL DETECTORS

Citation
Ws. Hong et al., GAS AVALANCHE PIXEL DETECTORS, IEEE transactions on nuclear science, 44(3), 1997, pp. 1001-1005
Citations number
19
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
44
Issue
3
Year of publication
1997
Part
1
Pages
1001 - 1005
Database
ISI
SICI code
0018-9499(1997)44:3<1001:GAPD>2.0.ZU;2-W
Abstract
We describe the structure and avalanche gain of gaseous pixel detector s. Each anode is a square 20 mu m x 20 mu m in size connected to an in dividual pad through a plated center section. The cathodes are plated squares interconnected to a common lead. The anode squares have a pitc h of 200 mu m in both x- and y- directions. The anodes and cathodes ar e aluminum layers deposited on amorphous silicon alloyed with carbon ( a-Si:C:H) to produce a bulk resistivity of similar to 10(13) Omega cm. Measurements on signals from a group of anodes shows an avalanche gas gain close to 10(4) at a cathode-anode potential of 640 volts using a gas mixture of 50/50 argon-ethane. The avalanche gain is about a fact or of 3 higher than that of microstrip devices we have tested, having the same pitch. For our initial measurements, 16 anodes were connected together to a charge sensitive preamplifier. In a final chamber each anode would be connected to an a-Si:H p-i-n readout diode with signals read out sequentially as in flat screen devices.