Effect of deep electron traps on contrast in AgCl emulsions

Computer simulation is used to study the effect of deep electron traps (irr eversible one-electron traps) on contrast in AgCl. Theoretical response cur ves derived by Silberstein are used to demonstrate the highest contrast pos sible for a given threshold for developablilty. These curves are then used as benchmarks in the simulation study. Agreement with the theoretical curve s is approached as recombination decreases, assuming the concentration of d eep electron traps and their trapping radii allow their electron trapping t o dominate latent-image formation. Sensitometric data on emulsions with RuC l5(NO)(2-) as a deep electron trap show that spectral sensitizing dyes that are expected to be good hole traps reduce or eliminate the high contrast i nduced by the dopant. This effect is consistent with the predictions obtain ed from computer simulation.