Silicon oxide formation in the disk environment

Authors
Citation
Ph. Kasai et Fp. Eng, Silicon oxide formation in the disk environment, J INF S P S, 2(1-2), 2000, pp. 125-128
Citations number
8
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF INFORMATION STORAGE AND PROCESSING SYSTEMS
ISSN journal
10998047 → ACNP
Volume
2
Issue
1-2
Year of publication
2000
Pages
125 - 128
Database
ISI
SICI code
1099-8047(200001/04)2:1-2<125:SOFITD>2.0.ZU;2-O
Abstract
Among many organic vapor contaminants released from structural components o f hard disk drives, organic siloxanes (released from silicone gaskets, for example) are particularly ominous, as they can be released in a relatively large quantity. It is known that the presence of siloxane contaminants ofte n leads to the formation of silicon oxide at the head-disk interface area. A plausible mechanism for the formation of silicon silicon oxide debris in the disk environment is presented. It is envisaged that volatile siloxane o ligomers such as D4 (octamethyl cyclotetrasiloxane) are released from compo nents containing PDMS (polydimethyl siloxane) and are repolymerized back in to PDMS at the head-disk interface when catalyzed by the acidic component o f a degraded lubricant. The PDMS thus formed, if heated at 300-350 degrees C in a thin-film configuration that would permit facile infusion of oxygen, readily converts to silicon oxide with minimal depolymerization.