Ion beam synthesis of polycrystalline SiC on SiO2 structures for MEMS applications

SiC on insulator for microelectromechanical systems has been directly synth esized by high-dose carbon ion implantation of amorphous or polycrystalline Si on SiO2. For this, a four-step implant process has been defined by TRIM simulation. X-ray diffraction and in-depth Auger electron spectroscopy mea surements corroborate the formation of a stoichiometric polycrystalline SiC layer above the sacrificial oxide. These data demonstrate the ability of t he process for the direct synthesis of complex SiC on insulator (SiCOI) str uctures. Micromechanical test structures have been fabricated from these la yers, which allowed the comparison of residual stress according to the synt hesis process of the layers.