Industrial MEMS on SOI

Authors
Citation
S. Renard, Industrial MEMS on SOI, J MICROM M, 10(2), 2000, pp. 245-249
Citations number
6
Categorie Soggetti
Mechanical Engineering
Journal title
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
ISSN journal
09601317 → ACNP
Volume
10
Issue
2
Year of publication
2000
Pages
245 - 249
Database
ISI
SICI code
0960-1317(200006)10:2<245:IMOS>2.0.ZU;2-2
Abstract
The industrial use of silicon on insulator (SOI) substrates is quickly spre ading. For microelectronics applications, this material brings new function ality, such as radiation-hard. high-voltage or low-voltage and low-consumpt ion integrated circuits. Industrial wafers are now commercially available a nd new technologies, such as Smart Cut(R) from SOITEC company, will provide low prices in high-volume production. SOI also provides very important fea tures for microelectromechanical systems (MEMS) and new industrial products , such as high-temperature and low-noise piezoresistive pressure sensors or miniature high-performance capacitive pressure and acceleration sensors, a re now proposed. These new generic technologies will provide various indust rial products in the near future.