Solution structure of hanatoxin1, a gating modifier of voltage-dependent K+ channels: Common surface features of gating modifier toxins

Citation
H. Takahashi et al., Solution structure of hanatoxin1, a gating modifier of voltage-dependent K+ channels: Common surface features of gating modifier toxins, J MOL BIOL, 297(3), 2000, pp. 771-780
Citations number
52
Categorie Soggetti
Molecular Biology & Genetics
Journal title
JOURNAL OF MOLECULAR BIOLOGY
ISSN journal
00222836 → ACNP
Volume
297
Issue
3
Year of publication
2000
Pages
771 - 780
Database
ISI
SICI code
0022-2836(20000331)297:3<771:SSOHAG>2.0.ZU;2-D
Abstract
The three-dimensional structure of hanatoxin1 (HaTx1) was determined by usi ng NMR spectroscopy. HaTx1 is a 35 amino acid residue peptide toxin that in hibits the drk1 voltage-gated K+ channel not by blocking the pore, but by a ltering the energetics of gating. both the amino acid sequence of HaTx1 and its unique mechanism of action distinguish this toxin from the previously described K+ channel inhibitors. Unlike most other K+ channel-blocking toxi ns, HaTx1 adopts an "inhibitor cystine knot" motif and is composed of two b eta-strands, strand I for residues 19-21 and strand II for residues 28-30, connected by four chain reversals. A comparison of the surface features of HaTx1 with those of other gating modifier toxins of voltage-gated Ca2+ and Na+ channels suggests that the combination of a hydrophobic patch and surro unding charged residues is principally responsible for the binding of gatin g modifier toxins to voltage-gated ion channels. (C) 2000 Academic Press.