S. Peppe et al., Formation of two isomeric C3HO radicals from charged precursors in the gasphase. Potential interstellar molecules, J PHYS CH A, 104(24), 2000, pp. 5817-5824
Theoretical calculations of the C3HO potential surface at the CCSD(T)/aug-c
c-pVDu/B3LYP/6-31G* level indicate that the three radicals HCCCO, CCCHO, an
d (cyclo-C3H)=O are stable, with HCCCO being the most stable of the three.
A fourth isomer, CCHCO, is unstable with respect to cyclization to (cyclo-C
3H)=O. Two isomers have been prepared by neutralization of charged precurso
rs, formed as follows: (i) HCCCO, by HC drop C-C(O)-O+(H)(Me) --> HC3O+ + M
eOH, and (ii) C2CHO, by (a) Me3SiC drop C-CHO + HO- --> C- drop C-CHO + Me3
SiOH and (b) C- drop C-CH(OH)-C drop CH --> C- drop C-CHO + C2H2. A compari
son of the CR and -NR+ spectra of -C2CHO indicate that C2CHO is (partially)
rearranging to an isomer that shows significant formation of CO.(+) in the
-NR+ spectrum of the anion. Ab initio calculations indicate that HCCCO is
the product of the isomerism and that a proportion of these isomerized neut
rals dissociate to CO and C2H. The neutral HCCCO may be formed by (i) synch
ronous rearrangement of C2CHO and/or (ii) stepwise rearrangement of C2CHO t
hrough (cyclo-C3H)=O. The second of these processes should have the higher
rate, as it has the lower barrier in the rate-determining step and the high
er Arrhenius pre-exponential A factor.