Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K)

Citation
G. Cartry et al., Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K), J PHYS D, 33(11), 2000, pp. 1303-1314
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
11
Year of publication
2000
Pages
1303 - 1314
Database
ISI
SICI code
0022-3727(20000607)33:11<1303:AOROFS>2.0.ZU;2-D
Abstract
This work is devoted to the study of atomic oxygen recombination on a glass surface, mainly in connection with atomic sources development. Ln this pap er we present a non-stationary model for atomic oxygen recombination on a f used silica surface. Kinetics equations for oxygen atoms, taking into accou nt heterogeneous reactions between gaseous atoms and the surface (Eley-Ride al mechanisms), as well as homogeneous processes involving surface migratio n of adsorbed species (Langmuir-Hinshelwood mechanisms), are solved. Surfac e reaction coefficients an calculated, and the choice of numerical values f or surface parameters is discussed. The solution to the equations is compar ed to our previous experiments concerning the influence of the surface stat e on atomic recombination. An estimation is made of surface reaction coeffi cient values.