The effects of ion-irradiation on light emitting poly [2-methoxy-5-(2'-ethy
l-hexyloxy), p-phenylene vinylene] (MEH-PPV) and poly (2,5-dihexyloxy-1,4-p
henylene-alt-4,4'-biphenylene) (PDPB) materials are investigated. Argon and
nitrogen ions are used for ion-irradiation, and the energy of ion-irradiat
ion is varied from 300 eV to 1 keV. The flux: of irradiated ions is changed
from 1x10(13) to 1x10(17) ions/cm(2) at a fixed ion beam current (=0.2 mu
A). The intensities of the PL spectra of the samples vary with the ion dose
, the kind of ion, and the energy of the ion beam, while the positions of m
ain peaks in the PL spectra are not shifted. We observe that there is no si
gnificant difference between the current vs voltage characteristics of ligh
t emitting diodes (LEDs) before and after treatment with ion-irradiation. T
he Variation of the surface morphology of the PDPB samples due to ion-irrad
iation is investigated through atomic force microscope (AFM) images. The pe
aks on the surface of the pristine PDPB sample are smooth, and the spatial
density of the peaks is relatively low. The peaks become sharper with incre
asing ion dose, which indicates an enhancement of the roughness of the poly
mer surface. The external quantum efficiency of the LED devices as a functi
on of the current density decreases, but is more stable with changing curre
nt density after treatment with ion-irradiation. We analyze that the stabil
ity of the quantum efficiency of the LED devices with ion-irradiated sample
s might be due to the roughness and the chemical change in the polymer surf
ace and to the increase of the interface area between the polymer and the A
l electrode.