Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy

Authors
Aqariden, F Shih, HD Liao, PK Duncan, WM Dat, R
Citation
F. Aqariden et al., Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1381-1384
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1381 - 1384
Database
ISI
SICI code
1071-1023(200005/06)18:3<1381:RCCUSE>2.0.ZU;2-E
Abstract
Real-time composition control using spectral (or spectroscopic) ellipsometr y (SE) in the growth of long-wavelength infrared (LWIR) Hg1-xCdxTe (x simil ar to 0.225) on Cd0.96Zn0.04Te(211) B by molecular beam epitaxy (MBE) was i nvestigated. Excellent compositional reproducibility among the 10 LWIR Hg1- xCdxTe growth runs was demonstrated with the aid of SE, with the average co mposition being x = 0,225 acid the standard deviation in x being 0.00042, t he lowest figure that has ever been reported. The ability of MBE to switch from one composition to another on demand and with first pass success using SE is also demonstrated. (C) 2000 American Vacuum Society. [S0734-211X(00) 04203-7].